L. M. Thomas and V. K. Lakdawala, "Influence of Arsenic Vapor Pressure During Coper Diffusion on Deep Level Foundation in Silicon Doped Gallium Arsenide," Journal of Electronics Materials, Vol. 22, No. 4, pp. 341-246, April 1993.

L. M. Thomas and V. K. Lakdawala, "Influence of Fabrication Techniques on Gallium Arsenide Switch Photoconductivity," Proceedings SPIE-OE/LASE '93, Paper #1873-13, January 21-23, 1993.

L. M. Thomas and V. K. Lakdawala, "Study of Diffusion of Copper in Silicon Doped Gallium Arsenide Using Photo-induced Current Transient Spectroscopy for Deep Level Characterization," Proceedings of International Conference on Diffusion in Materials, DIMAT '92, September 7-11, 1992, KYOTO, Japan.

V. K. Lakdawala, S. Panigrahi, L. Thomas, and R. Brinkmann, "Deep Level Characterization Studies for Optically Controlled Semiconductor Switch Materials Using a Novel Technique," Proc. SPIE Conference on Optically Activated Switching, Los Angeles, CA, January 20-21, p xxx, 1992.

R. J. Van Brunt, M. Misakian, S. V. Kulkarni, and V. K. Lakdawala, "Influence of a Dielectric Barrier on the Stochastic Behavior of Trichel-Pulse Corona," IEEE Transactions on Electrical Insulation, Vol. 26, No. 3, pp. 405-415, June 1991.

R. P. Brinkmann, K. H. Schoenbach, D. C. Stoudt, V. K. Lakdawala, G. A. Gerdin, and M. K. Kennedy, "The Lock-On Effect in Electron-Beam Controlled GaAs Switches," IEEE Trans. Electron Devices, 38, 701, 1991

D.C. Stoudt, K. H. Schoenbach, R. P. Brinkman, V. K. Lakdawala and G. A. Gerdin, "The Recovery Behavior of Semi-insulating GaAs in Electron-Beam Controlled Switches," IEEE Trans. Electron Devices, 37, 2472, 1990.

M.S. Mazzola, K. H. Schoenbach, V. K. Lakdawala and R. A. Roush, "Infrared Quenching of Conductivity at High Electric Fields in Bulk, Copper-Compensated, Optically-Activated GaAs Switch," IEEE Trans. Electron Devices, 37, 2499, 1990.

V. K. Lakdawala, K. H. Schoenbach, G. Barevadia, R. A. Roush, and M. S. Mazzola, "Photoquenching and Characterization Studies in a Bulk Optically Controlled Semiconductor Switch," Proc. SPIE's OE/Boston '90, Boston, MA, p 259, 1990.

R. P. Brinkmann, K. H. Schoenbach, V. K. Lakdawala, G. A. Gerdin, D. C. Stoudt and R. Roush, "High Power Switching with Electron-Beam Controlled Semiconductors accepted for Proc. SPIE's OE/Boston '90, Boston, MA, p203, 1990.

K. H. Schoenbach, H. J. Schulz, V. K. Lakdawala, B. Kimpel, R. P. Brinkmann, R. K. F. Germer, and G. Barevadia, "The Deep-Level Configuration of GaAs:Si:Cu - A Material for a New Type of Optoelectronic Switch," Proc. SPIE's Int. Conf. on Physical Concepts of Material for Novel Optoelectronic Device Applications, October 1990, Aaachen, FRG, vol. 1362, p. 428.

S. T. Ko, V. K. Lakdawala, K. H. Schoenbach, and M. S. Mazzola, "Influence of Copper Doping on the Performance of Optically Controlled GaAs Switches," J. Appl. Phys., 67, 1124,1990.

M. S. Mazzola, K. H. Schoenbach, V. K. Lakdawala, and S. T. Ko, "Nanosecond Optical Quenching of of Photoconductivity in a Bulk GaAs Switch," Appl. Phys. Lett., 55, 2102, 1989.

V. K. Lakdawala, S. R. Hunter, J. A. Rees and J. L. Moruzzi, "Operating Conditions and Failure Mechanisms in He-Ne Hollow Cathode Glow Discharge," Journal of Physics D: Applied Physics, 22, 584, 1989.

M. S. Mazzola, K. H. Schoenbach, V. K. Lakdawala, R. Germer, G. M. Loubriel and F. J. Zutavern, "GaAs-Photoconductive Closing Switches with High Dark Resistance and Microsecond Conductivity Decay," Applied Physics Letters, 54, 742 (1989).

K. H. Schoenbach, V. K. Lakdawala, D. C. Stoudt, T. F. Smith and R. P. Brinkmann, "Electron-Beam Controlled High Power Semiconductor Switches," IEEE Trans. on Electron Devices, 36, 1793, 1989.

K. H. Schoenbach, V. K. Lakdawala, R. Germer, and S. T. Ko, "An Optically Controlled Closing and Opening Switch," Journal of Applied Physics, 63, 2460 1988

K. H. Schoenbach, V. K. Lakdawala, S.T. Ko, M. Mazzola and R. Germer, "Laser Controlled Semiconductor Closing and Opening Switch," SPIE Proceedings, Vol. 871-21, Los Angeles, CA, 140 1988.

K. H. Schoenbach, V. K. Lakdawala, K. B. Schmitt and T. Powers, "Electron-Beam Controlled Semiconductor Switches," SPIE Proceedings, Vol. 871-20, Los Angeles, CA, 133 1988.

S. Albin, V. K. Lakdawala, J. A. Williams, C. E. Byvik and A. M. Buoncristiani, Jr., "Laser Damage Threshold of Diamond Films, " SPIE Proceedings, Vol. 877-22, Los Angeles, CA, 86 1988.

Book Chapter: S. T. Ko, K. H. Schoenbach, V. K. Lakdawala, and H. Chen, "Analysis of the Cathode Fall of Glow Discharges in He/SF6 Gas Mixtures," "Gaseous Dielectrics V," L. Christophorou (editor), Pergamon Press, 349 1987.

K. H. Schoenbach, R. K. Germer, V. K. Lakdawala, K. Schmitt, and S. Albin, "Concepts for Optical and Electron Beam Control of Bulk Semiconductor Switches," SPIE Proceedings, Vol. 735-20, Los Angeles, CA, 1987.

Book Chapter: S. R. Hunter, J. G. Carter, L. G. Christophorou and V. K. Lakdawala, "Transport Properties and Dielectric Strengths of Gas Mixtures for Use in Diffuse Discharge Opening Switches," Gaseous Dielectrics IV, L. G. Christophorou and M. O. Pace (ed.), Pergamon Press, 224, 1984.

V. K. Lakdawala and J. L. Moruzzi, "Attachment, Detachment and Ion-Molecule Reactions in SO2 and SO2-O2 Mixtures," J. Phys D. Appl. Phys., 14, 2015 1982.

V. K. Lakdawala and J. L. Moruzzi, "Measurements of Attachment Coefficients and Ionic Mobilities in SF6-N2 Mixtures Over Low Energy Range -1.2 - 4.0 eV," J. Phys. D: Appl. Phys., 13, 1439 1980.

V. K. Lakdawala and J. L. Moruzzi, "Measurements of Attachment Coefficients in NF3 -N2 and NF3 -Rare Gas Mixtures Using Swarm Techniques," J. Phys. D: Appl. Phys., 13, 377 1980.

J. L. Moruzzi and V. K. Lakdawala, "Electron Attachment in SO2 ," J. de Physique , 40, C7-11 1979.